dc C 6 ghz unterminated spdt switch technical data HMMC-2006 features ? frequency range: dc-6 ghz ? insertion loss: <1db @ 6 ghz ? isolation: >70 db @ 45 mhz >35 db @ 6 ghz ? return loss: >12 db (both input & output) ? switching speed: <1 ns ?p -1db : 23 dbm @ 50 mhz >27dbm @ 6 ghz ? harmonics: <-25 dbc @ 20 dbm (dc coupled) description the HMMC-2006 is a gaas monolithic microwave integrated circuit (mmic) designed for low insertion loss and high isolation from dc to 6 ghz. it is intended for use as a general-purpose, singlepole, double-throw (spdt) switch. one series and two shunt mesfets per throw provide 1.2 db maximum insertion loss and 35 db minimum isolation at 6 ghz. HMMC-2006 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. the HMMC-2006 is also available in an 8-lead flatpack. chip size: 960 x 1070 m m (37.8 x 42.1 mils) chip size tolerance: +0, -10 m m (+0, -0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 80 x 80 m m (3.2 x 3.2 mils), or larger absolute maximum ratings [1] symbol parameters/conditions units min. max. v sel select voltages 1 and 2 v -12 +3 p in rf input power dbm 30 t op operating temperature c -55 +125 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 (for 60 seconds max.) note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. t a = 25 c except for t ch , t stg , and t max . sel1 sel2 rf out1 rf in rf out2 chip id
2 dc specifications/physical properties, t a = 25 c symbol parameters and test conditions units min. typ. max. i l leakage current @ -10 v m a 100 v p pinch-off voltage @ 8 ma v -6.75 -3.25 bv gss breakdown voltage total v -18.0 -12.5 rf specifications, t a = 25 c, z o = 50 w , v sel high = 0 v, v sel low = -10 v symbol parameters and test conditions units min. typ. max. bw guaranteed operating bandwidth ghz dc 6 il insertion loss, rf in to rf out , f = 6 ghz, on throw db 1 1.2 iso isolation, rf in to rf out , f = 6 ghz, off throw db 35 40 rl in input return loss db 12 14 rl out output return loss db 12 15 p 1 db input power where il increases by 1 db f = 50 mhz dbm 18 23 t s switching speed, 10% C 90% rf envelope, f = 2 ghz ns 1
3 applications the HMMC-2006 can be used in instrumentation, communica- tions, radar, ecm, ew, and many other systems requiring spdt switching. it can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of me- chanical switches, and so on. it can also be used as a terminated spst (single-pole-single-throw) switch by placing a 50 w load on either rf output port. assembly techniques die attach may be done with either a ausn solder preform or conductive epoxy. gold thermosonic bonding is recom- mended for all bonds. the top and bottom metallization is gold. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. s-parameters [1] , t a =25 c, z o = 50 w , v sel high = 0 v, v sel low = -10 v frequency s 11 s 21 (insertion loss) s 31 (isolation) ghz mag. ang. mag. ang. mag. ang. 0.1 0.93 -8 4.26 172 0.01 86 0.5 0.0365 -27.03 0.9366 -11.32 0.0010 78.03 1.0 0.0372 -41.81 0.9336 -17.35 0.0017 76.84 1.5 0.0448 -63.14 0.9311 -23.47 0.0026 76.05 2.0 0.0542 -80.60 0.9286 -27.67 0.0033 75.66 2.5 0.0631 -88.46 0.9271 -29.73 0.0039 77.4 3.0 0.0715 -93.98 0.9242 -33.03 0.0049 81.14 3.5 0.0795 -101.90 0.9199 -38.93 0.0059 82.09 4.0 0.0872 -108.90 0.9164 -45.14 0.0063 78.90 4.5 0.0951 -114.40 0.9123 -50.49 0.0068 78.94 5.0 0.1022 -120.90 0.9054 -56.36 0.0078 84.68 5.5 0.1074 -123.50 0.9032 -62.07 0.0084 84.71 6.0 0.1138 -132.70 0.9058 -69.04 0.0115 91.24 note: 1. 3-port-wafer-probed data.
4 sel2 rf out rf out rf in sel2 figure 1. HMMC-2006 schematic. recommended operating conditions, t a =25 c select line rf path rf in to rf in to sel1 sel2 rf out1 rf out2 -10 v 0 v isolated low loss 0 v -10 v low loss isolated
5 HMMC-2006 typical performance 024 6 frequency (ghz) figure 2. insertion loss [1] vs. frequency. -80 -60 -70 -50 -40 024 6 -80 -60 -70 -50 -40 024 6 -30 -22 -26 -18 -14 insertion loss (db) frequency (ghz) figure 5. output-to-output isolation [2] vs. frequency. isolation (db) frequency (ghz) figure 3. input and output (on throw) return loss [1] vs. frequency. return loss (db) frequency (ghz) figure 4. input-to-output isolation [1] vs. frequency. isolation (db) s 21-on s 11 s 22 s 21-on s 21-off 024 6 -80 -60 -70 -50 -40 s 23 notes: 1. wafer-probed measurements 2. calculated from wafer-probed measurements
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. figure 6. HMMC-2006 bonding pad locations. (dimensions in micrometers) 535 460 610 995 0 75 0 960 1070 730 880 sel1 sel2 rf out1 rf in rf out2 chip id www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5965-9071e 5967-5765e (11/99)
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